2N6520 PBFREE

2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 NPN PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (NPN) Emitter-Base Voltage (PNP) Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO ICBO ICBO IEBO IEBO BVCBO BVCEO BVEBO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE hFE CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VCB=150V VCB=200V VCB=250V VEB=5.0V (NPN) VEB=4.0V (PNP) IC=100μA IC=1.0mA IE=10μA (NPN) IE=10μA (PNP) IC=10mA, IB=1.0mA IC=20mA, IB=2.0mA IC=30mA, IB=3.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=20mA, IB=2.0mA IC=30mA, IB=3.0mA VCE=10V, IC=100mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=10V, IC=50mA VCE=10V, IC=100mA SYMBOL VCBO VCEO VEBO VEBO IC IB PD TJ, Tstg 2N6515 2N6518 MIN MAX 50 50 50 250 250 6.0 5.0 0.30 0.35 0.50 1.0 0.75 0.85 0.90 2.0 35 50 50 300 45 220 25 - 2N6515 2N6518 250 250 2N6516 2N6519 300 300 6.0 5.0 500 250 625 -65 to +150 2N6516 2N6519 MIN MAX 50 50 50 300 300 6.0 5.0 0.30 0.35 0.50 1.0 0.75 0.85 0.90 2.0 30 45 45 270 40 200 20 - 2N6517 2N6520 350 350 2N6517 2N6520 MIN MAX 50 50 50 350 350 6.0 5.0 0.30 0.35 0.50 1.0 0.75 0.85 0.90 2.0 20 30 30 200 20 200 15 - UNITS V V V V mA mA mW °C UNITS nA nA nA nA nA V V V V V V V V V V V V R2 (18-January 2016) 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 NPN PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS ELECTRICAL SYMBOL fT Ccb Ceb Ceb ton toff CHARACTERISTICS - Continued: (TA=25°C) TEST CONDITIONS MIN VCE=20V, IC=10mA, f=20MHz 40 VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz (NPN) VEB=0.5V, IC=0, f=1.0MHz (PNP) VCC=100V, VBE=2.0V, IC=50mA, IB1=10mA VCC=100V, IC=50mA, IB1=IB2=10mA MAX 200 6.0 80 100 200 3.5 UNITS MHz pF pF pF ns μs TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (18-January 2016) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)